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ILPI-137A semiconductor emitter


ILPI-137A semiconductor emitter

The ILPI-137A pulsed semiconductor laser emitter has the MOCVD AlGaAs/GaAs laser diode array, the case and the cover with a glass window. The device is designed to be used as an emission source in illuminators, rangefinders and medical systems.

Specifications (at T=25 °C and the radiator area of 100 cm2)

Name of parameter Min Nominal Max
Laser wavelength, nm 840 860 880
Average pulsed laser power, W 500 600
Pulse amplitude of pump current, A 65 85
Pulse width of pump current (FWHM), ns 70 100 120
Operating voltage, V 95
Pulse repetition rate, Hz 5,000 10,000
Emitting area, mm 1.3 x 1.4
Laser divergence, grad:
in the plane parallel to p-n transition 12
in the plane perpendicular to p-n transition 30
Spectral line width (FWHM), nm 5

Reference parameters

  • A power is measured in the cone with a vertex of angle no less than 74°
  • The temperature shift of laser wavelength is no more than 0.3 nm/°C
  • The operating temperature of the case is minus 50...+50 °C
  • The minimum life time is 109 pulses
  • The specific value of a pump current is pointed in the certificate or the label
Typical watt-ampere characteristic of the emitter. The ILPI-137A pulsed semiconductor laser emitter
Typical watt-ampere characteristic of the emitter
Images of emitting area of laser diode array of the emitter. The ILPI-137A pulsed semiconductor laser emitter
Images of emitting area of laser diode array of the emitter
Total dimensions and electrical circuit. The ILPI-137A pulsed semiconductor laser emitter
Total dimensions and electrical circuit
Postal address
Building 1, 3 Vvedenskogo St., Moscow,
117342, Russian Federation
Phone & fax
Phone:
+7 495 333-91-44
Fax:
+7 495 333-00-03
Internet
E-mail:
bereg@niipolyus.ru
Skype:
niipolyus