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ILPI-135A semiconductor emitter


ILPI-135A semiconductor emitter

The ILPI-135A pulsed semiconductor laser emitter has the MOCVD AlGaAs/GaAs laser diode array, the case and the cover with a glass window. The device is designed to be used as an emission source in illuminators, rangefinders and medical systems.

Specifications (at T=25 °C and the radiator area of 100 cm2)

Name of parameter Min Nominal Max
Laser wavelength, nm 840 850 870
Average pulsed laser power, W 120 140
Pulse amplitude of pump current, A 40 50
Pulse width of pump current (FWHM), ns 40 100 150
Operating voltage, V 60
Pulse repetition rate, Hz 10,000 20,000
Emitting area, mm 0.36 x 0.5
Laser divergence, grad:
in the plane parallel to p-n transition 10
in the plane perpendicular to p-n transition 25
Spectral line width (FWHM), nm 3
Misalignment of emitting area and case, mm 0,5

Reference parameters

  • A power is measured in the cone with a vertex of angle no less than 74°
  • The temperature shift of a laser wavelength is no more than 0.3 nm/°C
  • The operating temperature of the case is minus 55...+70 °C
  • The minimum life time is 109 pulses
  • The specific value of a pump current is pointed in the certificate or the label
Laser divergence in the plane perpendicular to p-n transition. The ILPI-135A pulsed semiconductor laser emitter
Laser divergence in the plane perpendicular to p-n transition
Typical watt-ampere characteristic of the emitter. The ILPI-135A pulsed semiconductor laser emitter
Typical watt-ampere characteristic of the emitter
Total dimensions and electrical circuit. The ILPI-135A pulsed semiconductor laser emitter
Total dimensions and electrical circuit
Postal address
Building 1, 3 Vvedenskogo St., Moscow,
117342, Russian Federation
Phone & fax
Phone:
+7 495 333-91-44
Fax:
+7 495 333-00-03
Internet
E-mail:
bereg@niipolyus.ru
Skype:
niipolyus