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43DL-527 semiconductor laser module


43DL-527 semiconductor laser module

The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03) is designed for operation in the composition of hermetically sealed equipment.

The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03)
1 - insulator («-» of semiconductor laser module); 2 - contact plate («+» of semiconductor laser module)

The long side of the emitting area of the semiconductor laser module is parallel to the long side of the contact plate 2.

Technical data

The parameters of emission and the electrical parameters for acceptance and delivery under normal climatic conditions according to the GOST 20.57.406-81 are shown in the table.

Name of parameter Norm of spec, no less than Norm of spec, no more than
Laser wavelength, nm 1540 1560
Laser pulsed power, W 100 110
Pulse width (FWHM), ns 90 110
Pulse repetition rate of pump current, kHz 5 5
Weight of emitter, g 5
Size of emitting area, mm 1 х 1
Limiting laser average pulsed power under normal climatic conditions, W 110...115 110...115
Laser average pulsed power under all conditions of operation, W 90

Characteristics under the action of mechanical and climatic factors

The semiconductor laser module is resistant to the action of mechanical and climatic factors determined by the GOST RV 20.39.414.1-97 for the group of version 1U with the additions and the corrections.

Name and characteristics of external action Value
Sinusoidal vibration:
frequency range, Hz 10...500
peak shock acceleration, m/s2 (g) 49 (5)
Акустический шум:
frequency range, Hz 50...10,000
sound pressure level, dB 130
Mechanical single shock:
peak shock acceleration, m/s2 (g) 980 (100)
shock acceleration duration, ms 1...5
number of single shocks for each axis 20
Mechanical multiple shock:
peak shock acceleration, m/s2 (g) 245 (25)
shock acceleration duration, ms 5...15
number of single shocks for each axis 1000
High ambient temperature:
operating, °С 40
limiting, °С 50
Change of ambient temperature:
temperature range, °С from -50 to 50
number of cycles 3
cycle duration, h 1

The semiconductor laser module is to be resistant to the action of special factors 7.И1, 7.И6, 7.И7 corresponding to the group 1УC GOST RV.20.39.414.2–98. The requirements of resistance to action of the special factors 7.И with the other characteristics as well as action of the factors 7.С и 7.К are not shown.

The gamma-percentile failure time of the semiconductor laser module at g=90% in the composition of hermetically sealed equipment in the modes and under the conditions permissible by the ZHGDK.433755.060-03 TU is no less than 1010 pulses within the life time of 20 years.

The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03)
The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03)
The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03). Emission distribution of laser diode array in near field
Emission distribution of laser diode array in near field
The 43DL-527 semiconductor pulsed laser module (ZHGDK.433755.060–03). Emission spectrum of laser diode array
Emission spectrum of laser diode array
Postal address
Building 1, 3 Vvedenskogo St., Moscow,
117342, Russian Federation
Phone & fax
Phone:
+7 495 333-91-44
Fax:
+7 495 333-00-03
Internet
E-mail:
bereg@niipolyus.ru
Skype:
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